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Si7120DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
TrenchFET ? Power MOSFET
V DS (V)
60
R DS(on) ( Ω )
0.019 at V GS = 10 V
0.028 at V GS = 4.5 V
I D (A)
10
8.2
?
?
?
?
Halogen-free Option Available
RoHS
New Low Thermal Resistance COMPLIANT
PowerPAK ? 1212-8 Package with Low 1.07 mm Profile
?
100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? Primary Side Switch
? Synchronous Rectification
3.30 mm
1
S
2
S
S
3.30 mm
D
D
3
4
G
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7120DN-T1-E3 (Lead (Pb)-free)
Si7120DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
60
± 20
Unit
V
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy
a
T A = 25 °C
T A = 70 °C
L = 0 1 mH
I D
I DM
I S
I AS
E AS
10
8.0
3.2
40
22
24
6.3
5.1
1.3
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.8
2.4
- 55 to 150
260
1.5
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72771
S-80581-Rev. E, 17-Mar-08
www.vishay.com
1
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